Almere, the Netherlands – November 24, 2016 – In this paper, the influence of the formation history of a thin Ni1-xPtx:Si film on its thermal stability is investigated. Film degradation manifests itself as a transformation of the continuous film into physically separated islands, resulting in a sheet resistance increase. Higher silicide peak formation temperatures were observed to result in a reduced thermal stability. As a result an improved silicide thermal stability is demonstrated for conductive heating RTP2 as compared to laser / flash msec anneal. This improved thermal stability is discussed in terms of stress, grain size and Pt distribution. The observed thermal stability differences can be explained in terms of the residual stress in the film.