LEVO 6000

LEVO 6000 - Rapid Thermal Processing system

The LEVO 6000 is a single-wafer semiconductor system designed to enable a comprehensive range of Rapid Thermal Processing (RTP) applications:

    • Dopant activation
    • Silicidation
    • Rapid Thermal Oxidation (RTO)
    • Nitridation by N2 and NH3 anneal (contact barrier/HKMG)
    • CVD pre/post treatment
    • Stress relieving (BPSG)
    • High temperature cleaning
    • Copper anneal reduction with Hydrogen
    • High temperature surface cleaning with Hydrogen

The LEVO 6000 uses conduction-based heating for precise temperature control and excellent uniformity over the wafer. Its fast heating and cooling cycles work quickly, independent of film type, wafer pattern, optical properties, or material, leading to better results and shorter cycle times.

The LEVO 6000 supports a wide range of gases like N₂, Ar, He, O₂, NH₃, forming gas (FG) and H₂, making it a highly versatile platform. This RTP system is built for high-throughput environments, features advanced control systems, and full automation.

From R&D labs to full-scale production, semiconductor manufacturers across Europe, Asia and United States of America rely on the LEVO 6000 for consistent performance, reduced Cost-of-Ownership (CoO), and industry-leading reliability.

LEVO 6000 - Rapid Thermal Processing system

The LEVO 6000 is a single-wafer semiconductor system designed to enable a comprehensive range of Rapid Thermal Processing (RTP) applications:

    • Dopant activation
    • Silicidation
    • Rapid Thermal Oxidation (RTO)
    • Nitridation by N2 and NH3 anneal (contact barrier/HKMG)
    • CVD pre/post treatment
    • Stress relieving (BPSG)
    • High temperature cleaning
    • Copper anneal reduction with Hydrogen
    • High temperature surface cleaning with Hydrogen

The LEVO 6000 uses conduction-based heating for precise temperature control and excellent uniformity over the wafer. Its fast heating and cooling cycles work quickly, independent of film type, wafer pattern, optical properties, or material, leading to better results and shorter cycle times.

The LEVO 6000 supports a wide range of gases like N₂, Ar, He, O₂, NH₃, forming gas (FG) and H₂, making it a highly versatile platform. This RTP system is built for high-throughput environments, features advanced control systems, and full automation.

From R&D labs to full-scale production, semiconductor manufacturers across Europe, Asia and United States of America rely on the LEVO 6000 for consistent performance, reduced Cost-of-Ownership (CoO), and industry-leading reliability.

Processes

Dopant annealing

Elevating semiconductor performance through precise dopant activation and defect removal via thermal processing.

Silicidation

Metallic layer formation through thermal reaction, minimizing interface resistance for superior integrated circuit efficiency.

BPSG

Implementing doped silicate glass for insulating layers, facilitating smooth topography through low-temperature thermal reflow.

Rapid Thermal Oxidation

Swiftly growing thin, high-quality oxide layers on wafers for superior insulation and device performance.

Features and Benefits

    • Precise wafer temperature control
    • High throughput (>80 wafers/hour*)
    • Compatible with 200 mm and 300 mm silicon wafers
    • Excellent temperature uniformity across wafer
    • One step anneal with inert and reactive gases without stabilization or purge time
    • No box or susceptor required
    • Emissivity-independent annealing
    • Supports wafers with large bow
    • High uptime (≥ 95%) and low maintenance times
    • Low energy consumption with efficient gas conduction heating

*depending on process configuration