LEVO SiC RTA

LEVO SiC - Rapid Thermal Annealing system

The LEVO SiC RTA is a single-wafer Rapid Thermal Annealing (RTA) semicondictor system designed for fast and efficient processing of semi-transparent Silicon Carbide (SiC) wafers and Gallium Nitride on Silicon (GaN-on-Si) wafers, offering precise temperature control for the following applications:

    • RTA of SiC wafers
    • RTA of GaN-on-Si wafers

This makes the LEVO SiC RTA ideal for advanced semiconductor manufacturing, where quality, speed, and reliability are essential. Manufacturers in Europe, Asia and United States of America rely on this technology for consistent, high-quality SiC and GaN-on-Si wafer processing.

Processes

RTA of SiC wafers

RTA of GaN-on-Si wafers

Features and Benefits

    • Precise temperature control
    • High throughput (>30 wafers per hour*)
    • Compatible with 150 mm and 200 mm SiC and GaN-on-Si wafers
    • Processing wafers smaller than 150 mm, including small wafer pieces
    • Excellent temperature uniformity across wafer
    • One-step anneal process without stabilization or purge time
    • No box or susceptor required
    • Emissivity-independent annealing
    • Supports wafers with large bow
    • High uptime (≥ 95%) and low maintenance times
*depending on process configuration